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Diversité des prises en charge hospitalières de l’anorexie mentale en psychiatrie en France

• Authors : Lasfar, M.; Eveno, A.-L.; Huas, C.

• Source: L'Encéphale; 20240101, Issue: Preprints

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Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes.

• Authors : Place, S.; Carrere, J.-P.; Magnan, P.

• Source: 2011 12th European Conference on Radiation & Its Effects on Components & Systems; 1/ 1/2011, p314-320, 7p

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MOSFET with additional lateral trench gate.

• Authors : Ramadout, B.; Guo-Neng Lu; Carrere, J.-P.

• Source: 2009 International Conference on Microelectronics (ICM); 2009, p354-357, 4p

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Embedded FLASH memory thermal budget impact on core CMOS 90nm devices.

• Authors : Carrere, J.-P.; Larman, F.; van der Vegt, E.

• Source: ESSDERC 2007 - 37th European Solid State Device Research Conference; 2007, p263-266, 4p

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Silicon clean impact on 90nm CMOS devices performance.

• Authors : Carrere, J.-P.; Bernard, H.; Petitdidier, S.

• Source: ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p235-238, 4p

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Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC).

• Authors : Devoivre, T.; Lunenborg, M.; Julien, C.

• Source: Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design & Testing (MTDT2002); 2002, p157-162, 6p

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Ultra-Thin Gate Oxide (1.6 nm): New Mechanisms of Plasma Induced Damage and Oxidation Process Optimisation.

• Authors : Carrere, J.-P.; Bidaud, M.; Guyader, F.

• Source: 30th European Solid-State Device Research Conference; 2000, p532-535, 4p

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Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process.

• Authors : Carrere, J.; Oberlin, J.-C.; Haond, M.

• Source: 2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479); 2000, p164-167, 4p

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Electron-shading characterization in a HDP contact etching process using a patterned CHARM wafer.

• Authors : Carrere, J.-P.; Poiroux, T.; Lukaszek, W.

• Source: 2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479); 2000, p22-25, 4p

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Challenges in CMOS-based images.

• Authors : Roy, Francois; Tournier, A.; Wehbe-Alause, H.

Subjects: COMPLEMENTARY metal oxide semiconductors; SIGNAL-to-noise ratio; CROSSTALK

• Source: Physica Status Solidi (C); Jan2014, Vol. 11 Issue 1, p50-56, 7p

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