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Academic Journal

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage.

Authors : Liu, Bo (AUTHOR) ; Wei, Tao (AUTHOR); Hu, Jing (AUTHOR)

Subjects: *RANDOM access memory; *PHASE change materials; *RECORDS management

Source: Chinese Physics B. May2021, Vol. 30 Issue 5, p1-22. 22p.

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Academic Journal

A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique.

Authors : Lin, Li‐Min¹; Yang, Wen‐Luh² ; Lin, Yu‐Hsien³

Subjects: *RANDOM access memory; *LITHOGRAPHY; *RECORDS management

Source: Physica Status Solidi. A: Applications & Materials Science. Mar2017, Vol. 214 Issue 3, pn/a-N.PAG. 5p.

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Academic Journal

Bending Resistant Multibit Memristor for Flexible Precision Inference Engine Application.

Authors : Pal, Parthasarathi¹; Lee, Ke-Jing¹; Thunder, Sunanda²

Subjects: *NONVOLATILE random-access memory; *RANDOM access memory; *COMPUTER storage devices

Source: IEEE Transactions on Electron Devices. Aug2022, Vol. 69 Issue 8, p4737-4743. 7p.

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Academic Journal

Electrical Measurement of Cell-to-Cell Variation of Critical Charge in SRAM and Sensitivity to Single-Event Upsets by Low-Energy Protons.

Authors : Cannon, James M.¹ ; Loveless, T. Daniel¹ ; Estrada, Rafael¹

Subjects: *STATIC random access memory; *PROTONS; *RANDOM access memory

Source: IEEE Transactions on Nuclear Science. May2021, Vol. 68 Issue 5, p815-822. 8p.

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Academic Journal

OFWAR: Reducing SSD Response Time Using On-Demand Fast-Write-and-Rewrite.

Authors : Wu, Qi¹; Zhang, Tong¹

Subjects: *FLASH memory; *RANDOM access memory; *RECORDS management

Source: IEEE Transactions on Computers. Oct2014, Vol. 63 Issue 10, p2500-2512. 13p.

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Academic Journal

Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications.

Authors : Lu, Yegang^1,2; Song, Sannian¹; Song, Zhitang¹

Subjects: *COPPER; *RANDOM access memory; *CRYSTALLIZATION

Source: Applied Physics Letters. 5/7/2012, Vol. 100 Issue 19, p193114. 4p. 4 Graphs.

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Academic Journal

Ferroelectric-controlled all MXene nonvolatile flexible memory devices for data storage application.

Authors : Fatima, Sabeen¹ (AUTHOR); Tahir, Rabia¹ (AUTHOR); Rizwan, Syed¹ (AUTHOR)

Subjects: *DATA warehousing; *NONVOLATILE memory; *RANDOM access memory

Source: Applied Physics Letters. 7/3/2023, Vol. 123 Issue 1, p1-7. 7p.

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Academic Journal

Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory.

Authors : Petzold, Stefan¹ (AUTHOR) ; Sharath, S. U.¹ (AUTHOR); Lemke, Jonas¹ (AUTHOR)

Subjects: *NONVOLATILE random-access memory; *RANDOM access memory; *HEAVY ions

Source: IEEE Transactions on Nuclear Science. Jul2019, Vol. 66 Issue 7, p1715-1718. 4p.

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Academic Journal

Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory.

Authors : Arai, Hiroko¹ (AUTHOR) ; Imamura, Hiroshi¹ (AUTHOR)

Subjects: *RANDOM access memory; *ARTIFICIAL intelligence; *VOLTAGE control

Source: Journal of Magnetism & Magnetic Materials. Apr2023, Vol. 572, pN.PAG-N.PAG. 1p.

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Academic Journal

Fast Detection of Data Retention Faults and Other SRAM Cell Open Defects.

Authors : Josh Yang¹ ; Baosheng Wang¹ ; Yuejian Wu¹

Subjects: *RANDOM access memory; *COMPUTER storage devices; *INFORMATION storage & retrieval systems

Source: IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems. Jan2006, Vol. 25 Issue 1, p167-180. 14p.

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